A High-temperature Silicon-on-insulator Gate Driver IC for Silicon Carbide Junction Field Effect Transistor
There has been an increasing research interest in silicon carbide (SiC) for power electronics applications. SiC has emerged as the most likely candidate to bring about the next breakthrough in terms of power density and high efficiency in power electronics. One of the factors contributing to the expected increase in power density is the ability of SiC to reliably operate at higher temperatures than current silicon (Si) based power electronics can.29 Figure 4.7 Low voltage doubler schematic representation 30 Figure 4.8 Layout of low voltage doubler circuit 31 Figure ... circuit 36 Figure 4.14 High voltage doubler simulation results at 25 AdC 37 Figure 4.15 High voltage inverter schematicanbsp;...
| Title | : | A High-temperature Silicon-on-insulator Gate Driver IC for Silicon Carbide Junction Field Effect Transistor |
| Author | : | Edgar Santiago Cilio |
| Publisher | : | ProQuest - 2008 |
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